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Fuji Electric

K3677-01MR Datasheet Preview

K3677-01MR Datasheet

2SK3677-01MR

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2SK3677-01MR
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220F
Applications
Switching regulators
www.DataSheet4UU.cPomS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
700 V
VDSX *5
700 V
Continuous drain current
ID
±12 A
Pulsed drain current
ID(puls]
±48 A Equivalent circuit schematic
Gate-source voltage
VGS
±30 V
Repetitive or non-repetitive
Maximum Avalanche Energy
IAR *2
EAS *1
12
276.7
A
mJ
Drain(D)
Maximum Drain-Source dV/dt
dVDS/dt *4
40 kV/µs
Peak Diode Recovery dV/dt
dV/dt *3
5 kV/µs
Max. power dissipation
PD Ta=25°C
Tc=25°C
2.16
95
W
Gate(G)
Operating and storage
temperature range
Tch
Tstg
+150
-55 to +150
°C
°C
Source(S)
Isolation Voltage
Viso *6
2 kVrms
*1 L=3.53mH, Vcc=70V,Tch=25°C, See to Avalanche Energy Graph *2 Tch=<150°C
*3 IF<=-ID, -di/dt=50A/µs, Vcc<=BVDSS, Tch<=150°C *4 VDS=<700V *5 VGS=-30V *6 t=60sec, f=60Hz
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Test Conditions
ID=250µA VGS=0V
ID= 250µA VDS=VGS
VDS=700V VGS=0V Tch=25°C
VDS=560V VGS=0V
VGS=±30V VDS=0V
ID=6A
VGS=10V
Tch=125°C
ID=6A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=300V ID=6A
VGS=10V
RGS=10
VCC=350V
ID=12A
VGS=10V
L=3.53mH Tch=25°C
IF=12A VGS=0V Tch=25°C
IF=12A VGS=0V
-di/dt=100A/µs Tch=25°C
Min. Typ. Max. Units
700
3.0
V
5.0 V
25 µA
250
100 nA
0.72
0.93
6 12
S
1100 1650
pF
170 255
11 17
24.5 36
ns
7.5 12
47.5 72
10 17
31 46.5 nC
4.5 8
11 16.5
12 A
0.90
1.50 V
2.6 µs
16.0 µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
1.316 °C/W
58.0 °C/W
1
Free Datasheet http://www.nDatasheet.com




Fuji Electric

K3677-01MR Datasheet Preview

K3677-01MR Datasheet

2SK3677-01MR

No Preview Available !

2SK3677-01MR
Characteristics
Allowable Power Dissipation
PD=f(Tc)
120
100
80
60
www.DataSheet4U.com
40
20
0
0 25 50 75 100 125 150
Tc [°C]
FUJI POWER MOSFET
Typical Output Characteristics
ID=f(VDS):80 µs pulse test,Tch=25°C
20 20V 10V
8.0V
7.0V
15
6.5V
10
5 6.0V
VGS=5.5V
0
0 5 10 15 20 25
VDS [V]
Typical Transfer Characteristic
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C
10
Typical Transconductance
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C
100
10
1
0.1
0 1 2 3 4 5 6 7 8 9 10
VGS[V]
Typical Drain-Source on-state Resistance
1.4 RDS(on)=f(ID):80 µs pulse test,Tch=25°C
VGS=5.5V 6.0V
6.5V
1.3
1.2
7.0V
1.1 8.0V
10V
1.0 20V
0.9
0.8
0.7
0.6
0
5 10 15 20
ID [A]
1
0.1
1
ID [A]
10
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=6A,VGS=10V
2.5
2.0
1.5
max.
1.0
typ.
0.5
0.0
-50
-25
0
25 50 75 100 125 150
Tch [°C]
2
Free Datasheet http://www.nDatasheet.com


Part Number K3677-01MR
Description 2SK3677-01MR
Maker Fuji Electric
Total Page 4 Pages
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