P08N50E Datasheet - Fuji Electric

FMP08N50E

P08N50E Features

* Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSF

P08N50E General Description

Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Op.

P08N50E Datasheet (462.73 KB)

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Datasheet Details

Part number:

P08N50E

Manufacturer:

Fuji Electric

File Size:

462.73 KB

Description:

Fmp08n50e.

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P08N50E Features

P08N50E General Description

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