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TS862C12R Datasheet High Voltage Schottky Barrier Diode

Manufacturer: Fuji Electric

Overview: TS862C12R Major characteristics VRRM VF IO 120 0.88 10 V V A (10A) (120V / 10A ) [0401] High Voltage Schottky barrier diode Outline drawings, mm 0.9 ±0.3 10 +0.5 Characteristics TS862C12R Units Condition Tc=25°C MAX. 1.2 ±0.2 5.08 4.5 ±0.2 1.32 1.5 Max 9.3 ±0.5 0.8 —0.1 2.7 +0.2 0.4 +0.2 1. Gate 2, 4. Drain 3.

Key Features

  • Low VF High Voltage Center tap connection.

TS862C12R Distributor