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2SK3579-01MR - Power MOSFET

Features

  • High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof.

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www.DataSheet4U.com 2SK3579-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings TO-220F Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Ratings Unit 150 V 130 V Continuous drain current ±23 A Pulsed drain current ±96 A Gate-source voltage ±20 V Repetitive or non-repetitive 23 A Maximum Avalanche Energy 242 mJ Maximum Drain-Source dV/dt 20 kV/µs Peak Diode Recovery dV/dt 5 kV/µs Max. power dissipation 2.
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