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  Fujitsu Electronic Components Datasheet  

FLC057WG Datasheet

C-Band Power GaAs FET

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FLC057WG pdf
FLC057WG
FEATURES
• High Output Power: P1dB = 27.0dBm(Typ.)
• High Gain: G1dB = 9.0dB(Typ.)
• High PAE: ηadd = 38%(Typ.)
• Proven Reliability
• Hermetic Metal/Ceramic Package
C-Band Power GaAs FET
DESCRIPTION
The FLC057WG is a power GaAs FET that is designed for general
purpose applications in the C-Band frequency range as it provides
superior power, gain, and efficiency.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Total Power Dissipation
PT Tc = 25°C
Storage Temperature
Channel Temperature
Tstg
Tch
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 4.4 and -0.25 mA respectively with
gate resistance of 1000.
3. The operating channel temperature (Tch) should not exceed 145°C.
Rating
15
-5
3.75
-65 to +175
175
Unit
V
V
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Min.
Saturated Drain Current
Transconductance
IDSS
gm
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 125mA
-
-
Pinch-off Voltage
Vp
Gate Source Breakdown Voltage VGSO
VDS = 5V, IDS =10mA
IGS = -10µA
-1.0
-5
Limit
Typ. Max.
200 300
100 -
-2.0 -3.5
--
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
P1dB
G1dB
VDS = 10V
IDS 0.6 IDSS (Typ.),
f = 8 GHz
25.5 27.0 -
8.0 9.0 -
Unit
mA
mS
V
V
dBm
dB
Power-added Efficiency
ηadd
- 38 -
%
Thermal Resistance
CASE STYLE: WG
Rth Channel to Case
- 27 40
°C/W
G.C.P.: Gain Compression Point
Edition 1.1
July 1999
1


  Fujitsu Electronic Components Datasheet  

FLC057WG Datasheet

C-Band Power GaAs FET

No Preview Available !

FLC057WG pdf
FLC057WG
C-Band Power GaAs FET
POWER DERATING CURVE
5
4
3
2
1
0 50 100 150 200
Case Temperature (°C)
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
200
100
0
VGS =0V
-0.5V
-1.0V
-1.5V
-2.0V
2 4 6 8 10
Drain-Source Voltage (V)
OUTPUT POWER vs. INPUT POWER
28
VDS=10V
IDS 0.6 IDSS 6 GHz
26 Pout
8 GHz
24
6 GHz
22
8 GHz
20
18 ηadd
16
50
40
30
20
10
10 12 14 16 18 20
Input Power (dBm)
P1dB & ηadd vs. VDS
f=8GHz
IDS 0.6 IDSS
28
50
27 ηadd
P1dB
26
40
30
8 9 10
Drain-Source Voltage (V)
2


Part Number FLC057WG
Description C-Band Power GaAs FET
Maker Fujitsu
Total Page 4 Pages
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FLC057WG pdf
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