Part FLC057WG
Description C-Band Power GaAs FET
Manufacturer Fujitsu Semiconductor Limited
Size 78.64 KB
Fujitsu Semiconductor Limited
FLC057WG

Overview

  • High Output Power: P1dB = 27.0dBm(Typ.)
  • High Gain: G1dB = 9.0dB(Typ.)
  • High PAE: ηadd = 38%(Typ.)
  • Proven Reliability
  • Hermetic Metal/Ceramic Package C-Band Power GaAs FET