FLC057WG Datasheet | Fujitsu Semiconductor Limited

FEATURES - High Output Power: P1d B = 27.0d Bm(Typ.) - High Gain: G1d B = 9.0d B(Typ.) - High PAE: ηadd = 38%(Typ.) - Proven Reliability - Hermetic Metal/Ceramic Package C-Band Power Ga As FET DESCRIPTION The FLC057WG is a power Ga As FET that is designed for general purpose applications in the C-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Symbol Condition Drain-Source Voltage Gate-Source Voltage VDS VGS Total Power Dissipation PT Tc = 25°C Storage Temperature Channel Temperature Tstg Tch Fujitsu remends the following conditions for the reliable operation of Ga As FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 4.4 and -0.25 m A respectively with gate resistance of 1000Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. Rating 15 -5 3.75 -65 to +175 175 Unit V V W °C °C ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Symbol Test Conditions Min. Saturated Drain Current Transconductance IDSS gm VDS = 5V, VGS = 0V VDS = 5V, IDS = 125m A - Pinch-off Voltage Vp Gate Source Breakdown Voltage VGSO VDS = 5V, IDS =10m A IGS = -10µA -1.0 -5 Limit Typ. Max. 200 300...