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FLC057WG - C-Band Power GaAs FET

Description

The FLC057WG is a power GaAs FET that is designed for general purpose applications in the C-Band frequency range as it provides superior power, gain, and efficiency.

Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance.

Features

  • High Output Power: P1dB = 27.0dBm(Typ. ).
  • High Gain: G1dB = 9.0dB(Typ. ).
  • High PAE: ηadd = 38%(Typ. ).
  • Proven Reliability.
  • Hermetic Metal/Ceramic Package C-Band Power GaAs FET.

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Datasheet preview – FLC057WG

Datasheet Details

Part number FLC057WG
Manufacturer Fujitsu
File Size 78.64 KB
Description C-Band Power GaAs FET
Datasheet download datasheet FLC057WG Datasheet
Additional preview pages of the FLC057WG datasheet.

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Full PDF Text Transcription

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FLC057WG FEATURES • High Output Power: P1dB = 27.0dBm(Typ.) • High Gain: G1dB = 9.0dB(Typ.) • High PAE: ηadd = 38%(Typ.) • Proven Reliability • Hermetic Metal/Ceramic Package C-Band Power GaAs FET DESCRIPTION The FLC057WG is a power GaAs FET that is designed for general purpose applications in the C-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Symbol Condition Drain-Source Voltage Gate-Source Voltage VDS VGS Total Power Dissipation PT Tc = 25°C Storage Temperature Channel Temperature Tstg Tch Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1.
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