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FLL410IK-4C - L-Band High Power GaAs FET

Description

The FLL410IK-4C is a partially matched 40 Watt GaAs FET that is designed for use in 3.4

3.7 GHz band amplifiers.

This new product is uniquely suited for use in WLL applications as it offers excellent linearity, high efficiency, high gain, long term reliability and ease of use.

Features

  • High Output Power: Pout=46.0dBm(Typ. ) High Gain: GL=11.5dB(Typ. ) High PAE: ηadd=44%(Typ. ) Broad Band: 3.4~3.7GHz Hermetically Sealed Package.

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Full PDF Text Transcription

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L-Band High Power GaAs FET FEATURES High Output Power: Pout=46.0dBm(Typ.) High Gain: GL=11.5dB(Typ.) High PAE: ηadd=44%(Typ.) Broad Band: 3.4~3.7GHz Hermetically Sealed Package DESCRIPTION The FLL410IK-4C is a partially matched 40 Watt GaAs FET that is designed for use in 3.4 – 3.7 GHz band amplifiers. This new product is uniquely suited for use in WLL applications as it offers excellent linearity, high efficiency, high gain, long term reliability and ease of use. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. FLL410IK-4C www.DataSheet4U.
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