MBM29DL161BE-12 - 16M (2M x 8/1M x 16) BIT Dual Operation
Fujitsu Semiconductor Limited
Download the MBM29DL161BE-12 datasheet PDF.
This datasheet also covers the MBM29DL163TE variant, as both devices belong to the same 16m (2m x 8/1m x 16) bit dual operation family and are provided as variant models within a single manufacturer datasheet.
Key Features
0.23 µm Process Technology.
Simultaneous Read/Write operations (dual bank)
Multiple devices available with different bank sizes (Refer to Table 1)
Host system can program or erase in one bank, then immediately and simultaneously read from the other bank
Zero latency between read and write operations
Read-while-erase
Read-while-program.
Single 3.0 V read, program, and erase
Minimizes system level power requirements
s.
Note: The manufacturer provides a single datasheet file (MBM29DL163TE_FujitsuMediaDevices.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for MBM29DL161BE-12 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
MBM29DL161BE-12. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-1E FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT Dual Operation MBM29DL16XTE/BE -70/90/12 s FEATURES • 0.23 µ...
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× 16) BIT Dual Operation MBM29DL16XTE/BE -70/90/12 s FEATURES • 0.23 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1) Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write operations Read-while-erase Read-while-program • Single 3.0 V read, program, and erase Minimizes system level power requirements s PRODUCT LINE UP (Continued) Part No. Ordering Part No. VCC = 3.3 V +0.3 V –0.3 V VCC = 3.0 V +0.6 V –0.3 V Max. Address Access Time (ns) Max. CE
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MBM29DL161BE-12 Datasheet
