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MBM29DL163BD-90 - FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT

This page provides the datasheet information for the MBM29DL163BD-90, a member of the MBM29DL16xTD FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT family.

Description

Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write operations Read-while-erase Read-while-program Single 3.0 V read, program, and erase Minimizes system level power requirements s PRODUCT LI

Features

  • 0.33 µm Process Technology.
  • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to “MBM29DL16XTD/BD Device Bank Divisions Table” in sGENERAL.

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Datasheet Details

Part number MBM29DL163BD-90
Manufacturer Fujitsu
File Size 1.10 MB
Description FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT
Datasheet download datasheet MBM29DL163BD-90 Datasheet
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Full PDF Text Transcription

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www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20874-7E FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT Dual Operation MBM29DL16XTD/BD -70/90 s FEATURES • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to “MBM29DL16XTD/BD Device Bank Divisions Table” in sGENERAL DESCRIPTION) Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write operations Read-while-erase Read-while-program • Single 3.0 V read, program, and erase Minimizes system level power requirements s PRODUCT LINE UP (Continued) Part No. Ordering Part No. VCC = 3.3 V +0.3 V –0.3 V VCC = 3.0 V +0.6 V –0.
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