MBM29DL163TD-70 bit equivalent, flash memory cmos 16m (2m x 8/1m x 16) bit.
* 0.33 µm Process Technology
* Simultaneous Read/Write operations (dual bank)
Multiple devices available with different bank sizes (Refer to “MBM29DL16XTD/BD D.
Host system can program or erase in one bank, then immediately and simultaneously read from the other bank
Zero latency between read and write operations
Read-while-erase
Read-while-program
* Single 3.0 V read, program, and erase
Minimizes.
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