Datasheet4U Logo Datasheet4U.com

MBM29DL164TD-70 - FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT

Download the MBM29DL164TD-70 datasheet PDF. This datasheet also covers the MBM29DL16xTD variant, as both devices belong to the same flash memory cmos 16m (2m x 8/1m x 16) bit family and are provided as variant models within a single manufacturer datasheet.

General Description

Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write operations Read-while-erase Read-while-program Single 3.0 V read, program, and erase Minimizes system level power requirements s PRODUCT LI

Key Features

  • 0.33 µm Process Technology.
  • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to “MBM29DL16XTD/BD Device Bank Divisions Table” in sGENERAL.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MBM29DL16xTD_FujitsuMediaDevices.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for MBM29DL164TD-70 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MBM29DL164TD-70. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20874-7E FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT Dual Operation MBM29DL16XTD/BD -70/90 s FEATURES • 0.33 µm P...

View more extracted text
× 16) BIT Dual Operation MBM29DL16XTD/BD -70/90 s FEATURES • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to “MBM29DL16XTD/BD Device Bank Divisions Table” in sGENERAL DESCRIPTION) Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write operations Read-while-erase Read-while-program • Single 3.0 V read, program, and erase Minimizes system level power requirements s PRODUCT LINE UP (Continued) Part No. Ordering Part No. VCC = 3.3 V +0.3 V –0.3 V VCC

More Datasheets from Fujitsu Semiconductor Limited

Part Number Description
MBM29DL164TD-90 FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT
MBM29DL164TE-12 CMOS FLASH MEMORY
MBM29DL164TE-70 CMOS FLASH MEMORY
MBM29DL164TE-90 CMOS FLASH MEMORY
MBM29DL164BD-70 FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT
MBM29DL164BD-90 FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT
MBM29DL164BE-12 16M (2M x 8/1M x 16) BIT Dual Operation
MBM29DL164BE-70 16M (2M x 8/1M x 16) BIT Dual Operation
MBM29DL164BE-90 16M (2M x 8/1M x 16) BIT Dual Operation
MBM29DL161BD-70 FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT