MBM29DL321BD-12 - 32M (4M x 8/2M x 16) BIT Dual Operation
Fujitsu Semiconductor Limited
Download the MBM29DL321BD-12 datasheet PDF.
This datasheet also covers the MBM29DL321BD variant, as both devices belong to the same 32m (4m x 8/2m x 16) bit dual operation family and are provided as variant models within a single manufacturer datasheet.
Key Features
0.33 µm Process Technology.
Simultaneous Read/Write operations (dual bank)
Multiple devices available with different bank sizes (Refer to Table 1) Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write operations Read-while-erase Read-while-program.
Single 3.0 V read, program, and erase Minimizes system level power requirements
s.
Note: The manufacturer provides a single datasheet file (MBM29DL321BD_FujitsuMediaDevices.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for MBM29DL321BD-12 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
MBM29DL321BD-12. For precise diagrams, and layout, please refer to the original PDF.
FUJITSU SEMICONDUCTOR DATA SHEET DS05-20873-4E FLASH MEMORY CMOS 32M (4M × 8/2M × 16) BIT Dual Operation MBM29DL32XTD/BD -80/90/12 s FEATURES • 0.33 µm Process Technology...
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tion MBM29DL32XTD/BD -80/90/12 s FEATURES • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1) Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write operations Read-while-erase Read-while-program • Single 3.0 V read, program, and erase Minimizes system level power requirements s PRODUCT LINE UP (Continued) Part No. www.DataSheet4U.com Ordering Part No. VCC = 3.3 V +0.3 V –0.3 V VCC = 3.0 V +0.6 V –0.3 V Max. Address Access Time (ns) Max. CE
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MBM29DL321BD-12 Datasheet
