MBM29DL64DF-70 - FLASH MEMORY CMOS 64M (8 M x 8/4 M x 16) BIT
Fujitsu Semiconductor Limited
Download the MBM29DL64DF-70 datasheet PDF.
This datasheet also covers the MBM29DL64DF variant, as both devices belong to the same flash memory cmos 64m (8 m x 8/4 m x 16) bit family and are provided as variant models within a single manufacturer datasheet.
General Description
MBM29DL64DF is a 64 M-bit, 3.0 V-only Flash memory organized as 8 Mbytes of 8 bits each or 4 M words of 16 bits each.
The device comes in 48-pin TSOP (1) and 48-ball FBGA packages.
This device is designed to be programmed in system with 3.0 V VCC supply.
Note: The manufacturer provides a single datasheet file (MBM29DL64DF_FujitsuMediaDevices.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for MBM29DL64DF-70 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
MBM29DL64DF-70. For precise diagrams, and layout, please refer to the original PDF.
FUJITSU SEMICONDUCTOR DATA SHEET DS05-20905-1E FLASH MEMORY CMOS 64 M (8 M × 8/4 M × 16) BIT Dual Operation MBM29DL64DF-70 s DESCRIPTION MBM29DL64DF is a 64 M-bit, 3.0 V-...
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eration MBM29DL64DF-70 s DESCRIPTION MBM29DL64DF is a 64 M-bit, 3.0 V-only Flash memory organized as 8 Mbytes of 8 bits each or 4 M words of 16 bits each. The device comes in 48-pin TSOP (1) and 48-ball FBGA packages. This device is designed to be programmed in system with 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The device can also be reprogrammed in standard EPROM programmers. The device is organized into four physical banks : Bank A, Bank B, Bank C and Bank D, which are considered to be four separate memory arrays operations.
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MBM29DL64DF-70 Datasheet
