MBM29F016A-12 Description
FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 16M (2M × 8) BIT DS05-20844-4E MBM29F016A-70/-90/-12.
MBM29F016A-12 Key Features
- Single 5.0 V read, write, and erase Minimizes system level power requirements
- patible with JEDEC-standard mands Pinout and software patible with single-power supply Flash Superior inadvertent write
- 48-pin TSOP(I) (Package Suffix: PFTN-Normal Bend Type, PFTR-Reverse Bend Type)
- Minimum 100,000 write/erase cycles
- High performance
- Sector erase architecture
- Embedded Erase™ Algorithms Automatically pre-programs and erases the chip or any sector
- Embedded Program™ Algorithms Automatically programs and verifies data at specified address
- Data Polling and Toggle Bit feature for detection of program or erase cycle pletion
- Ready/Busy output (RY/BY) Hardware method for detection of pro