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MBM29QM12DH-60 - 128M (8M x 16) BIT FLASH MEMORY

Download the MBM29QM12DH-60 datasheet PDF. This datasheet also covers the MBM29QM12DH variant, as both devices belong to the same 128m (8m x 16) bit flash memory family and are provided as variant models within a single manufacturer datasheet.

General Description

The MBM29QM12DH is 128 M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words of 16 bits each.

The device is offered in 56-pin TSOP and 80-ball FBGA package.

This device is designed to be programmed in-system with the standard system 3.0 V Vcc supply.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MBM29QM12DH_FujitsuMediaDevices.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for MBM29QM12DH-60 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MBM29QM12DH-60. For precise diagrams, and layout, please refer to the original PDF.

FUJITSU SEMICONDUCTOR DATA SHEET PAGE MODE FLASH MEMORY CMOS 128M (8M× 16) BIT DS05-20909-1E MBM29QM12DH-60 s DESCRIPTION The MBM29QM12DH is 128 M-bit, 3.0 V-only Page mo...

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12DH-60 s DESCRIPTION The MBM29QM12DH is 128 M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words of 16 bits each. The device is offered in 56-pin TSOP and 80-ball FBGA package. This device is designed to be programmed in-system with the standard system 3.0 V Vcc supply. 12.0 V Vpp and 5.0 V Vcc are not required for write or erase operations. The device can also be reprogrammed in standard EPROM programmers. (Continued) s PRODUCT LINE UP Part No. VCC = 3.0 V +0.6 –0.3 V V Max Random Address Access Time (ns) Max Page Address Access Time (ns) Max CE Access Time (ns) Max OE Access Time (ns) MBM29Q