MBM29SL160TD-10 - 16M (2M x 8/1M x 16) BIT FLASH MEMORY
Fujitsu Semiconductor Limited
Download the MBM29SL160TD-10 datasheet PDF.
This datasheet also covers the MBM29SL160TD variant, as both devices belong to the same 16m (2m x 8/1m x 16) bit flash memory family and are provided as variant models within a single manufacturer datasheet.
Key Features
Single 1.8 V read, program, and erase Minimizes system level power requirements.
Compatible with JEDEC-standard commands Uses same software commands as E2PROMs.
Compatible with JEDEC-standard world-wide pinouts 48-pin TSOP(I) (Package suffix: PFTN.
Normal Bend Type, PFTR.
Reversed Bend Type) 48-ball FBGA (Package suffix: PBT).
Note: The manufacturer provides a single datasheet file (MBM29SL160TD_FujitsuMediaDevices.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for MBM29SL160TD-10 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
MBM29SL160TD-10. For precise diagrams, and layout, please refer to the original PDF.
FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT DS05-20877-1E MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 s FEATURES • Single 1.8 V read, program,...
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TD-10/-12/MBM29SL160BD-10/-12 s FEATURES • Single 1.8 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts 48-pin TSOP(I) (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type) 48-ball FBGA (Package suffix: PBT) • Minimum 100,000 program/erase cycles • High performance 100 ns maximum access time • Sector erase architecture Eight 4K word and thirty one 32K word sectors in word mode Eight 8K byte and thirty one 64K byte sectors in byte mode Any combination of secto
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