900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




  Fujitsu Electronic Components Datasheet  

FLC167WF Datasheet

C-Band Power GaAs FET

No Preview Available !

FLC167WF
C-Band Power GaAs FET
FEATURES
• High Output Power: P1dB = 31.8dBm(Typ.)
• High Gain: G1dB = 7.5dB(Typ.)
• High PAE: ηadd = 35%(Typ.)
• Proven Reliability
• Hermetic Metal/Ceramic Package
DESCRIPTION
The FLC167WF is a power GaAs FET that is designed for general
purpose applications in the C-Band frequency range as it provides
superior power, gain, and efficiency.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Total Power Dissipation
PT Tc = 25°C
Storage Temperature
Tstg
Channel Temperature
Tch
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 9.6 and -1.0 mA respectively with
gate resistance of 200.
3. The operating channel temperature (Tch) should not exceed 145°C.
Rating
15
-5
7.5
-65 to +175
175
Unit
V
V
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Min.
Saturated Drain Current
Transconductance
IDSS
gm
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 400mA
-
-
Pinch-off Voltage
Vp
Gate Source Breakdown Voltage VGSO
VDS = 5V, IDS = 30mA
IGS = -30µA
-1.0
-5
Limit
Typ. Max.
600 900
300 -
-2.0 -3.5
--
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
P1dB
G1dB
VDS = 10V,
IDS = 0.6 IDSS (Typ.),
f = 6 GHz
30.5 31.8 -
6.5 7.5 -
Unit
mA
mS
V
V
dBm
dB
Power-added Efficiency
ηadd
- 35 -
%
Thermal Resistance
CASE STYLE: WF
Rth Channel to Case
- 15 20
°C/W
G.C.P.: Gain Compression Point
Edition 1.1
July 1999
www.DataSheet.in
1


  Fujitsu Electronic Components Datasheet  

FLC167WF Datasheet

C-Band Power GaAs FET

No Preview Available !

FLC167WF
C-Band Power GaAs FET
POWER DERATING CURVE
10
DRAIN CURRENT
vs. DRAIN-SOURCE VOLTAGE
8 600 VGS =0V
6 -0.5V
400
4 -1.0V
2 200 -1.5V
-2.0V
0 50 100 150 200
Case Temperature (°C)
0 2 4 6 8 10
Drain-Source Voltage (V)
OUTPUT POWER
& IM3 vs. INPUT POWER
VDS=10V
27 f1 = 6.0 GHz
25
f2 = 6.01GHz
2-tone Test
23
Pout
21
19
IM3
-10
-20
-30
-40
17 -50
10 12 14 16 18
Input Power (S.C.L.) (dBm)
S.C.L.: Single Carrier Level
OUTPUT POWER vs. INPUT POWER
VDS=10V
32 IDS 0.6 IDSS
30
Pout
28
26
24
22
20
4 GHz
6 GHz
50
4 GHz
40
6 GHz 30
20
ηadd
10
14 16 18 20 22 24
Input Power (dBm)
P1dB & ηadd vs. VDS
f=6GHz
IDS 0.6 IDSS
32
P1dB
31
ηadd
30
50
40
30
8 9 10
Drain-Source Voltage (V)
www.DataSheet.in
2


Part Number FLC167WF
Description C-Band Power GaAs FET
Maker Fujitsu Component
PDF Download

FLC167WF Datasheet PDF






Similar Datasheet

1 FLC167WF C-Band Power GaAs FET
Fujitsu Component





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy