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MB82D01171A - 16 Mbit (1 M word x 16 bit) Mobile Phone Application Specific Memory

Description

The Fujitsu MB82D01171A is a CMOS Fast Cycle Random Access Memory (FCRAM) with asynchronous Static Random Access Memory (SRAM) interface containing 16,777,216 storages accessible in a 16-bit format.

This MB82D01171A is suited for low power applications such as Cellular Handset and PDA.

Features

  • Asynchronous SRAM Interface 1 M word × 16 bit Organization Fast Random Cycle Time : tRC = 90 ns Fast Random Access Time : tAA = tCE = 80 ns, 85 ns, 90 ns Low Power Consumption : IDDS1 = 200 µA, 100 µA (L version) , 70 µA (LL version) Wide Operating Conditions : VDD = +2.3 V to +2.7 V +2.7 V to +3.1 V +3.1 V to +3.5 V TA =.
  • 30 °C to +85 °C.
  • Byte Write Control.
  • 4 words Address Access Capability.
  • Power Do.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-11404-2E MEMORY Mobile FCRAMTM CMOS 16 Mbit (1 M word × 16 bit) Mobile Phone Application Specific Memory MB82D01171A-80/80L/80LL/85/85L/85LL/90/90L/90LL CMOS 1,048,576-WORD × 16 BIT Fast Cycle Random Access Memory with Low Power SRAM Interface s DESCRIPTION The Fujitsu MB82D01171A is a CMOS Fast Cycle Random Access Memory (FCRAM) with asynchronous Static Random Access Memory (SRAM) interface containing 16,777,216 storages accessible in a 16-bit format. This MB82D01171A is suited for low power applications such as Cellular Handset and PDA. Note: FCRAM is a trademark of Fujitsu Limited, Japan.
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