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  Fujitsu Electronic Components Datasheet  

MB82DP02183C-65L Datasheet

Mobile Phone Application Specific Memory

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FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-11422-3E
MEMORY Mobile FCRAMTM
CMOS
32M Bit (2 M word × 16 bit)
Mobile Phone Application Specific Memory
MB82DP02183Cwww.DataSheet4U.com
-65L
DESCRIPTION
CMOS 2,097,152-WORD x 16 BIT
Fast Cycle Random Access Memory
with Low Power SRAM Interface
The Fujitsu MB82DP02183C is a CMOS Fast Cycle Random Access Memory (FCRAM*) with asynchronous
Static Random Access Memory (SRAM) interface containing 33,554,432 storages accessible in a 16-bit format.
MB82DP02183C is utilized using a FUJITSU advanced FCRAM core technology and improved integration in
comparison to regular SRAM. This MB82DP02183C is suited for mobile applications such as Cellular Handset
and PDA.
*: FCRAM is a trademark of Fujitsu Limited, Japan
FEATURES
• Asynchronous SRAM Interface
• Fast Access Cycle Time : tAA = tCE = 65 ns Max
• 8 words Page Access Capability : tPAA = 20 ns Max
• Low Voltage Operating Condition : VDD = +2.6 V to +3.5 V
• Wide Operating Temperature : TA = -30 °C to +85 °C
• Byte Control by LB and UB
• Low Power Consumption : IDDA1 = 30 mA Max
IDDS1 = 80 µA Max
• Various Power Down mode : Sleep
4M-bit Partial
8M-bit Partial
• Shipping Form : Wafer/Chip, 71-ball plastic FBGA package
Copyright© 2004-2006 FUJITSU LIMITED All rights reserved


  Fujitsu Electronic Components Datasheet  

MB82DP02183C-65L Datasheet

Mobile Phone Application Specific Memory

No Preview Available !

MB82DP02183C-65L
PIN ASSIGNMENT
(TOP VIEW)
ABCDEFGH J K LM
www.DataSheet4U.com
8
7
6
5
4
3
2
1
NC NC
A15 NC NC A16 NC VSS
NC NC
NC NC A11 A12 A13 A14 NC DQ16 DQ8 DQ15 NC NC
A8 A19 A9 A10 DQ7 DQ14 DQ13 DQ6
WE CE2 A20
DQ5 VDD NC
DU DU DU
DQ4 VDD DQ12
LB UB A18 A17 DQ2 DQ10 DQ11 DQ3
NC A7 A6 A5 A4 VSS OE DQ1 DQ9 NC NC
NC NC
A3 A2 A1 A0 NC CE1
NC NC
(BGA-71P-M03)
2


Part Number MB82DP02183C-65L
Description Mobile Phone Application Specific Memory
Maker Fujitsu Media Devices
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MB82DP02183C-65L Datasheet PDF






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