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MB82DP02183D - 32M Bit (2 M word X 16 bit) Mobile Phone Application Specific Memory

Description

The Fujitsu MB82DP02183D is a CMOS Fast Cycle Random Access Memory (FCRAM

) with asynchronous Static Random Access Memory (SRAM) interface containing 33,554,432 storages accessible in a 16-bit format.

Features

  • Asynchronous SRAM Interface Fast Access Cycle Time : 8 words Page Access Capability : Low Voltage Operating Condition : Wide Operating Temperature : tAA = tCE = 65 ns Max tPAA = 20 ns Max VDD = + 2.6 V to + 3.5 V TA =.
  • 30 °C to + 85 °C TJ =.
  • 30 °C to + 90 °C.
  • Byte Control by LB and UB.
  • Low Power Consumption.
  • Various Power Down mode.
  • Shipping Form : IDDA1 = 30 mA Max IDDS1 = 100 µA Max : Sl.

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Other Datasheets by Fujitsu Semiconductor Limited

Part Number Description
MB82DP02183C-65L Mobile Phone Application Specific Memory
MB82DP02183E-65L 32 Mbit Mobile FCRAM
MB82DP04183C 64M Bit (4 M word X 16 bit) Mobile Phone Application Specific Memory
MB82D01171A 16 Mbit (1 M word x 16 bit) Mobile Phone Application Specific Memory
MB82DBS04163C MEMORY Mobile FCRAMTM CMOS 64 M Bit

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-11436-1E MEMORY Mobile FCRAMTM CMOS 32M Bit (2 M word × 16 bit) Mobile Phone Application Specific Memory MB82DP02183D-65L CMOS 2,097,152-WORD x 16 BIT Fast Cycle Random Access Memory with Low Power SRAM Interface ■ DESCRIPTION The Fujitsu MB82DP02183D is a CMOS Fast Cycle Random Access Memory (FCRAM*) with asynchronous Static Random Access Memory (SRAM) interface containing 33,554,432 storages accessible in a 16-bit format. MB82DP02183D is utilized using a Fujitsu advanced FCRAM core technology and improved integration in comparison to regular SRAM. This MB82DP02183D is suited for mobile applications such as Cellular Handset and PDA.
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