MBM29DL163TD bit equivalent, (mbm29dl16xtd/bd) flash memory cmos 16m (2m x 8/1m x 16) bit.
Dual Operation
* 0.33 µm Process Technology
* Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to “MBM.
Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write operations Read-while-erase Read-while-program
* Single 3.0 V read, program, and erase Minimizes syste.
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