• Part: MBM29DL164TE
  • Description: CMOS FLASH MEMORY
  • Manufacturer: Fujitsu Semiconductor Limited
  • Size: 353.07 KB
Download MBM29DL164TE Datasheet PDF
Fujitsu Semiconductor Limited
MBM29DL164TE
FEATURES Dual Operation - 0.23 µm Process Technology - Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1) Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write operations Read-while-erase Read-while-program - Single 3.0 V read, program, and erase Minimizes system level power requirements (Continued) s PRODUCT LINE UP Part No. VCC = 3.3 V Ordering Part No. VCC = 3.0 V Max. Address Access Time (ns) Max. CE Access Time (ns) Max. OE Access Time (ns) +0.3 V - 0.3 V +0.6 V - 0.3 V MBM29DL16XTE/BE 70 - 70 70 30 - 90 90 90 35 - 12 120 120 50 s PACKAGES 48-pin plastic TSOP (I) Marking Side 48-pin plastic TSOP (I) 48-pin plastic FBGA Marking Side (FPT-48P-M19) (FPT-48P-M20) (BGA-48P-M11) MBM29DL16XTE/BE-70/90/12 (Continued) - patible with JEDEC-standard mands Uses same software mands as E2PROMs - patible with JEDEC-standard...