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MBM29SL800BE - FLASH MEMORY 8M (1M x 8/512K x 16) BIT

Download the MBM29SL800BE datasheet PDF. This datasheet also covers the MBM29SL800TE variant, as both devices belong to the same flash memory 8m (1m x 8/512k x 16) bit family and are provided as variant models within a single manufacturer datasheet.

General Description

The MBM29SL800TE/BE are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each.

The MBM29SL800TE/BE are offered in a 48-ball FBGA and 45-ball SCSP packages.

These devices are designed to be programmed in-system with the standard system 1.8 V VCC supply.

Key Features

  • 0.23 µm Process Technology.
  • Single 1.8 V read, program, and erase Minimizes system level power requirements.
  • Compatible with JEDEC-standard world-wide pinouts 48-ball FBGA (Package suffix : PBT) 45-ball SCSP (Package suffix : PW).
  • Minimum 100,000 program/erase cycles.
  • High performance 90 ns maximum access time.
  • Sector erase architecture One 8 Kword, two 4 Kwords, one 16 Kword, and fifteen 32 Kwords sectors in word mode One 16 Kbyte, two 8 Kb.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MBM29SL800TE_FujitsuMediaDevices.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for MBM29SL800BE (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MBM29SL800BE. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20911-1E FLASH MEMORY CMOS 8 M (1 M × 8/512 K × 16) BIT MBM29SL800TE/BE-90/10 s DESCRIPTION The MBM29SL800TE/BE ...

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2 K × 16) BIT MBM29SL800TE/BE-90/10 s DESCRIPTION The MBM29SL800TE/BE are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TE/BE are offered in a 48-ball FBGA and 45-ball SCSP packages. These devices are designed to be programmed in-system with the standard system 1.8 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers. (Continued) s PRODUCT LINE UP Part No. VCC Max Address Access Time Max CE Access Time Max OE Access Time 90 ns 90 ns 30 ns MBM29SL800TE/BE