• Part: MBM29SL800TE
  • Description: FLASH MEMORY CMOS 8 M (1 M X 8/512 K X 16) BIT
  • Manufacturer: Fujitsu Semiconductor Limited
  • Size: 437.96 KB
MBM29SL800TE Datasheet (PDF) Download
Fujitsu Semiconductor Limited
MBM29SL800TE

Key Features

  • 0.23 µm Process Technology
  • Single 1.8 V read, program, and erase Minimizes system level power requirements
  • compatible with JEDEC-standard world-wide pinouts 48-ball FBGA (Package suffix : PBT) 45-ball SCSP (Package suffix : PW)
  • Minimum 100,000 program/erase cycles
  • High performance 90 ns maximum access time
  • Sector erase architecture One 8 Kword, two 4 Kwords, one 16 Kword, and fifteen 32 Kwords se