D54D6D Datasheet - GE

NPN POWER DARLINGTON TRANSISTORS

* High DC Current Gain: hFE =600 (Min.) (at VCE =2V, IC =3A)

* Monolithic construction with built-in base-emitter shunt resistor.

* Isolated TO-220 package. CASE STYLE TO-2201S DIMENSIONS ARE IN INCHES AND (MILLIMETERS) .406(10.3) MAX. EQUIVALENT CIRCUIT BASE 0 .055(1.4)

D54D6D

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Npn power darlington transistors.

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D54D6D NPN POWER DARLINGTON TRANSISTORS GE

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