D54D6D transistors equivalent, npn power darlington transistors.
* High DC Current Gain:
hFE =600 (Min.) (at VCE =2V, IC =3A)
* Monolithic construction with built-in base-emitter shunt resistor.
* Isolated TO-220 package.
.
high voltage switching appl ications.
Features:
* High DC Current Gain:
hFE =600 (Min.) (at VCE =2V, IC =3A)
* .
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