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GE

D66EW1 Datasheet Preview

D66EW1 Datasheet

NPN POWER TRANSISTORS

No Preview Available !

HIGH VOLTAGE
NPN POWER DARLINGTON
TRANSISTORS
D66DW1,2,3
D66EW1,2,3
VeER = 600-700 VOLTS
VeEV =800-900 VOLTS
50 AMP, 167 WATTS
The D66DW/EW is a high voltage NPN high current power
Darlington especially designed for applications requiring
high blocking voltage capability such as: 460VAC line motor
controls, power supplies and UPS systems as well as
European 380 VAC line operated systems. This device
utilizes GE's latest advances in bipolar technology and
features the 066 package offering: collector isolation from
heat sink, TO-3 mounting compatibility and quick-connect
terminals.
The D66DW/EW also features a discrete fast recovery anti-
parallel high power diode which eliminates the need for an
external flyback diode in most inverter applications.
Features:
• Very high blocking voltage - VCEV 800 to 900 Volts
• High current - IC(Peak) 75 Amps
• Discrete high power flyback diode
• UL recognized industrial package
• Two versions - with or without speedup diode
!lu:~:~l!e~:,.tjll ~r~1 1~.... @ I
If.
'E'w ~
CASE STYLE 066
DIMENSIONS ARE IN INCHES
AND (MILLIMETERS)
TYP'""1
I
~1 x :R
t '..L
a
Kl2-
1 1 .-=i==ft nHh T •t
j IF· I;"I
AA1I- :-::1:'t.....ORIENTATION OF THE
FLAT IS NOT];JCONTROLLJEO
AS
I
AC
nl
! II
. \. A----ooI
I
S INCHES MEmlC
Y MM
IA lAIN ..... MIN MAX
A 1.505 1.540 38.22 39.12
F .120 .132 3.04 3.35
G .6Q5 .645 15.30 16.40
S INCHES METRIC
Y MM
IA MIN I......... 1.....
S.485 .510 120$7 12.15
T .150 .170 aB' 4.32
U.985 1.D15 25.01 25.80
H .!MO .880 23.87 24.'9
J .307 - 7m -
V.45O REf. 11.43 REF.
W .160 _ 4.57
D66EW
D66DW
The collector-emitter diode is
La discrete high power diode.
K, .120 ,132 3.04 3.35 )(,.05O.D58 1.27 tA7
,'71 .164 4.34 4.64
L .184 .In 4.57 4.88
~.085.Q73 US 1.85
3..Y .157 .177
".SO
M .484 .484 11.78 12,30
Z 1.180 1.182 2a.g7 30.30
N .247 .255 6.27 8.48 M .130 .155 3.30 UO
P .210 .230 5.33 5.84 AD.684 .11M 17.37 17.90
.eoQ .275 REF. 7.00 REF. N; .031 .Q35 .78
R .970 REF. .... REF. AD .100 REF. ... REF.
_ _-======--=====~_.-J
DEVICE CIRCUIT
=maximum ratings (TC 250 C) (unless otherwise noted)
RATING
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
D66DW
D66EW
Collector Current - Continuous
Peak (Repetitive)
Peak (Non-Repetitive)
Base Current - Continuous
Peak (Non-Repetitive)
Total Power Dissipation @ TC = 25°C
Derate above 25° C
Operating and Storage
Junction Temperature Range
Isolation Voltage
SYMBOL
VCEV
VCER
VESO
Ic
ICM
ICSM
Is
ISM
Po
TJ, TSTG
VISOL
D66DW1/EW1
800
600
8
5
50
75
125
10
20
167
1.33
-40 to +150
2500
D66DW2IEW2
850
650
8
5
50
75
125
10
20
167
1.33
-40 to +150
2500
D66DW3/EW3
900
700
8
5
50
75
125
10
20
167
1.33
UNITS
Volts
Volts
Volts
A
A
Watts
W/oC
-40 to +150
2500
°C
V(rms)
thermal characteristics
Thermal Resistance, (transistor)
(diode)
See page 845 for mounting and handling considerations.
.75 .75 .75
444
545




GE

D66EW1 Datasheet Preview

D66EW1 Datasheet

NPN POWER TRANSISTORS

No Preview Available !

=electrical characteristics (Tc 250 C) (unless otherwise specified)
CHARACTERISTIC
SYMBOL 1 MIN
TYP
MAX
off characteristics
= = =Collector-Emitter Sustaining Voltage
D66DW1/EW1
(Ic 5A, Vclamp VCE (Rated), RSE 10.0) D66DW2/EW2
D66DW3/EW3
Collector Cutoff Current
= =(VCE Rated VCEV, VSE(off) 1.5V)
TJ = 25°C
TJ =150°C
Emitter Cutoff Current
(VES =4.5V, IC =0)
(VES =1.5V, IC =0)
D66DW
D66EW
VCER(sus)
ICEV
IESO
600
650
700
-
-
-
-
-
-
-
-
-
-
-
-
1.0
2.5
350
second breakdown
I Second Breakdown with Base Forward Biased
FBSOA
SEE FIGURE3
on characteristics
DC Current Gain
(Ic
(Ic
==7550AA,,
VCE
VCE
==51V0V) )
Collector-Emitter Saturation Voltage
= =(Ic 50A, Is 4A)
= =(Ic 20A, Is 2A)
Base-Emitter Saturation Voltage
(Ic =50A, Is =4A)
(Ic =20A, Is =2A)
hFE
VCE(sat)
VSE(sat)
25
15
--
-
-
-
-
-
-
-
-
-
-
2.5
2.0
3.5
3.0
switching characteristics
Resistive Load
Delay Time
Rise Time
Storage Time
Fall Time
VCE =500V
IC =50A
IS1 =4A, IS2 =6A
=tp 50 J.f,sec
TYP.
MAX.
OW EW OW EW
td - - 0.75 0.5 .5
tr - - .3 1.0 1
ts - - 5 10 15
tf - - 1 2 4
emitter-collector diode characteristics
Forward Voltage
(IF
(IF
==5205AA))
Reverse Recovery Time
= = =(IF 50A, di/dt 25A/J.f,sec, RS1E .25.0)
VF
VF
Trr
-
-
-
- 2.0
- 2.5
2.0 -
UNIT
Volts
mA
rnA
-
V
V
J.f,S
Volts
Volts
J.f,sec
1000
800
600
400
z
...;( 200
C>
Zw
<C
<C
100
:u:> 80
I
w...
60
.r: 40
/
20
V
/'
TYPICAL CHARACTERISTICS
70
"""v-
~
'\.
\
VeE= 5V
~
60
win·
ffi 50
:";-:
~
~ 40
w
<C
<C
u::> 30
o<C
t;
~ 20
-"
8
10
D66DW/EWI
I
\ \ \ 0660,/EW2-
0660W/EW3
10
1
2
4 6 8 10
20
40 60 80 100
aa 100 200 300 400 SOO 600 700 800 900
COLLECTOR CURRENT (AMPERES)
COLLECTOR - EMITTER VOLTAGE (VOLTS)
FIGURE 1. TYPICAL CURRENT GAIN
FIGURE 2. REVERSE BIAS SAFE OPERATING AREA
(CLAMPED)
546


Part Number D66EW1
Description NPN POWER TRANSISTORS
Maker GE
Total Page 3 Pages
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