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GE

D66GV6 Datasheet Preview

D66GV6 Datasheet

NPN POWER TRANSISTORS

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HIGH SPEED
NPN POWER DARLINGTON
TRANSISTORS
D66GV5,6,7
400-500 VOLTS
50 AMP, 125 WATTS
The D66GV is a high voltage NPN high current power
darlington especially designed for use in PWM applications
where fast and efficient switching is required. This device
utilizes GE's latest advances in bipolar technology and
features the D66 Package offering: collector isolation from
heat sink, TO-3 mounting compatibility and quick-connect
terminals.
.
The D66GV also features a discrete fast recovery antiparallel
high power diode which eliminates the need for an external
flyback diode in motor control and other inverter applications
such as power supplies and UPS systems.
Features:
• Fast switching - tf{TVP) 0.5 f.LS
• High blocking voltage - VCEV 500 to 700 Volts
• High current - IC(Peak) 75 Amps
• High gain - hFE{MIN) 50 @ 50 Amps
• Discrete high power fast recovery diode
• UL recognized isolated base package
c
DEVICE 8
--eIRCUIT
"NOTE: The
collector-
emitter diode
is a discrete
fast-recovery
high power
diode.
=maximum ratings (TC 250 C) (unless otherwise noted)
1lu' .tI\ut!:.0:l.Ttll ~~1 Jt.... @ I
IT.
~pI ~: ~
CASE STYLE 066
DIMENSIONS ARE IN INCHES
AND (MILLIMETERS)
ORIENTATION OF THE
Ra
FLAT IS NOT CONTROLLED
1 t-~I;tt~ M1r:l~ I
J l~ ,I I:~
! II
I. A------/
I
S INCHES METRIC
~ MIN MAX MINMMMAX
A 1.505 1.540 38.22 38.12
F .120 .132 3.04 3.35
G .605 .645 15.36 16.40
H .940 .9EIO 23.87 24.19
J .307 - 7.80 -
K .120 .132 31M 3.35
K .171 .1&4 4.34 4.&4
L .184 ,192 4.57 4.88
tot .0464 ,484 11.78 12.30
N .247 .255 8.21 6.48
P .210 .230 5.33 5.84
Q .275 REF. 7.00 REF.
R .970 REF. 24.64 REF.
S INCHES METRIC
~ MIN I MAX MINM1MMAX
S.495 .510 12.57 12.95
T .150 .110 3.81 4.32
U.985 1.015 25.01 25.80
V.45O REF. 11.43 REF.
W .180
4.51
X .050 .058 1.27 1.47
I~ .Q65 .073 US 1.85
Y .157 .177 3.98 4.50
Z 1.180 1.192 29.97 30.30
AA .130 .165 3.30 4.30
AS.684.704 17.37 17.90
AC .031 .ms .78 .90
AD .100 REF. 2.54 REF.
RATING
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current - Continuous
Peak (Repetitive)
Peak (Non-Repetitive)
Base Current - Continuous
Peak (Non-Repetitive)
Total Power Dissipation @Tc =25°C
Derate above 25° C
Operating and Storage
Junction Temperature Range
Isolation Voltage
SYMBOL
VCEV
VCER
VESO
IC
ICM
ICSM
IS
ISM
Po
TJ. TSTG
VISOL
D66GV5
500
400
7
50
75
125
10
20
125
1.0
-40 to +150
2500
D66GV6
600
450
7
50
75
125
10
20
125
1.0
-40 to +150
2500
D66GV7
700
500
7
50
75
125
10
20
125
1.0
-40 to +150
2500
UNITS
Volts
Volts
Volts
A
A
Watts
W/oC
°C
V(rms)
thermal characteristics
Thermal ReSistance, (transistor)
(diode)
(1) Pulse Test: Pulse Width = 300 ms. Duty Cycle:5 2%.
See page 845 for mounting and handling considerations.
1.0 1.0 1.0
2.5 2.5 2.5
549




GE

D66GV6 Datasheet Preview

D66GV6 Datasheet

NPN POWER TRANSISTORS

No Preview Available !

electrical characteristics (Tc = 250 C) (unless otherwise specified)
I I I ICHARACTERISTIC
SYMBOL MIN
TYP
off characteristics
Col/ector-Emitter Sustaining Voltage
= =(IC 1A, RSE 100)
Col/ector Cutoff Current
=(VCE Rated VCEV, VSE{off) = 1.5V)
Emitter Cutoff Current
(VES = 5V, Ic = 0)
D66GV5
D66GV6
D66GV7
=TJ 25°C
TJ = 150°C
VCEO(sus)
ICEV
IESO.
400
450
550
~
-
-
~
-
-
-
-
-
MAX
-
--
1.0
2.5
10
second breakdown
I Second Breakdown with Base Forward Biased
FBSOA
SEE FIGURE 24
on characteristics
DC Current Gain
(IC = 75A, VCE = 5V)
(Ic = 50A, VCE = 5V)
(Ic = 20A, VCE = 5V)
Col/ector-Emitter Saturation Voltage
(IC = 75A, Is = 5A)
(Ic = 50A, Is = 4A)
(Ic = 20A, Is = 2A)
Base-Emitter Saturation Voltage
(IC = 75A, Is = 5A)
(IC = 50A, Is = 4A)
(IC = 20A, Is = 2A)
hFE
25 150
50 300
100 350
---
VCE(sat)
-
-
-
1.6 3.0
1.3 2.0
1.0 1.5
VSE(sat)
-
--
2.2 3.5
2.0 3.0
- 2.5
switching characteristics
Resistive Load
Delay Time
Rise Time
Storage Time
Fall Time
VCE = 250V
le= SOA
IS1 = 2.5A, IS2 = 5A
PW = 50 p'sec
-td 0.1 O.S
tr - 6.S 1.0
-ts 2.5 3.0
tf - 0.6 0.75
emitter-collector diode characteristics
Forward Voltage
@TJ = 2SoC
@TJ = 1S0°C
(IF = 25A
Reverse Recovery Time
(IF = 50A, di/dt = 100Alp.sec, VSE(off) = 1.5V)
Vp
Vp
Trr
--
-
1.3 2.0
1.3 2.S
O.S 1.0
UNIT
Volts
mA
mA
-
V
V
V
p.s
Volts
Volts
p'sec
550


Part Number D66GV6
Description NPN POWER TRANSISTORS
Maker GE
Total Page 4 Pages
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