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D70Y.8T1 Datasheet Preview

D70Y.8T1 Datasheet

NPN POWER TRANSISTORS

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SURFACE-MOUNT
NPN POWER TRANSISTORS
D70Y.8T1
30 VOLTS
800 mAMP, 500 mWATTS
Designed for audio frequency amplifier applications.
Features:
• High DC current: hFE = 100 - 320
• Suitable for output stage of 1-Watt amplifier
• PD=1 - 2W (Mounted on ceramic substrate)
• Small flat package
-Complementary to D71Y.8T1
- See page 840 for mounting and handling considerations.
@P1MARKING SYSTEM
TYPENAME
hFE
DESIGNATION
hFE DESIGNATION
1) 70-240
2) 70-140
3) 120-240
NPN
COLLECTOR
CASE STYLE SOT-89 EMITTER
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
.181
(4.6 MAX.)
;;;I~U I' I 'I.018 - .002 '.003
I(0.45 ~ 0.05) (+0.08)
I
e.q to
~ I .0~02,-:-,'~.00?i;-3'.003 I
*"-++II ",.0",6,'-,;;,-
(0.4 - 0.05) (·0.08)
,
(0.4 -0.05) ('0.08)
.059 ± .004 --t---+--+-- .059 ± .004
(1.S±O.I)
(1.5±O.1)
n
maximum ratings (TA = 25° C) (unless otherwise specified)
RATING
Collector-Emitter Voltage
Collector-Base Voltage
Emitter Base Voltage
Collector Current - Continuous
Base Current - Continuous
Total Power Dissipation @ Te = 25°C
@ Te = 25°C(1)
Operating and Storage
Junction Temperature Range
SYMBOL
VCEO
VeBO
VEBO
Ie
IB
Po
TJ, TSTG
thermal characteristics(2)
(1) Mounted on ceramic substrate (250mm2 x O.Bt).
(2) See page B41 for thermal considerations.
571
D70Y.8T1
30
35
5
800
160
500
1000
-55 to +150
UNITS
Volts
Volts
Volts
mA
mA
mWatts
°C




GE

D70Y.8T1 Datasheet Preview

D70Y.8T1 Datasheet

NPN POWER TRANSISTORS

No Preview Available !

electrical characteristics (TA = 25° C) (unless otherwise specified)
CHARACTERISTIC
I I ISYMBOL MIN
TYP
off characteristics
Collector-Emitter Breakdown Voltage
(Ic =10mA. IB =0)
Collector Cut-off Current
(VCB =35V. IE =0)
Emitter Cutoff Current
(VEB =5V. Ic =0)
V(BR)CEO
ICBO
lEBO
30
-
-
-
-
-
on characteristics
DC Current Gain(3)
(Ic
(Ic
==710000mmAA..
VCE
VCE
==11VV))
Collector-Emitter Saturation Voltage
(Ic =500mA. IB =20mA)
Base-Emitter Voltage
(VCE =1V. Ic =10mA)
(3) See page 44 for hFE range.
hFE
VCE(sat)
VBE(on)
100
35
-
0.5
-
-
-
-
MAX
UNIT
- Volts
100 nA
100 nA
320 -
-
0.5 V
0.8 V
1000
87
6
800
1
/ ~ . / i"""
.9
~ ~Iz- 600
"".....W
II:
e~II:
~
u::> ~V......i.--'"
f?II: 400
y -uw
V:l
0
U
200
COMMON EMITTER
Tc=25'C
5
4
3
I
2
IB=1mA
I
0
o2
0
45
6
COLLECTOR-EMITTER VOLTAGE VCE (V)
FIG. 1 IC· VCE
7
1000
500
w 300
.cIi.
~ r-
(!j
ffi 100
II:
Iu::I>: 50
U
Q
30
Ta= 100'C
25
-25
COMMON EMITTER
VCE= 1V
...
10
3
10
30
100 300
1000
COLLECTOR CURRENT IC (rnA)
FIG. 2 hFE - IC
572


Part Number D70Y.8T1
Description NPN POWER TRANSISTORS
Maker GE
Total Page 3 Pages
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