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D74FY4D Datasheet Preview

D74FY4D Datasheet

NPN POWER TRANSISTOR

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NPN POWER DARLINGTON
TRANSISTOR ARRAY
D74FY4D
80 VOLTS
4 AMP, 3 WATTS
Designed for high power switching applications, hammer
drive, pulse motor drive and inductive load drive applications.
Features:
• High reliability small-sized available (3 in 1)
• Epoxy single-inline package (8 pin)
• High collector power dissipation: Po =3W @ TA =25°C
(Three device action)
• High collector current: IC =4A (Max.)
• High DC current gain:
hFE = 2000 (Min.) @ VCE = 2V, IC = 1A
CASE STYLE SIP-8 PIN
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
ARRAY CONFIGURATION
.OS9R
(Of5f ' i l r - - - - - \ I
=maximum ratings (TA 250 C) (unless otherwise specified)
RATING
Collector-Emitter Voltage
Collector-Base Voltage
Emitter Base Voltage
Collector Current - Continuous
Peak
Base Current - Continuous
=Collector Power Dissipation
(One Device Action, TA 25° C)
=Collector POWer Dissipation
(Three Device Action, TA 25° C)
Operating and Storage
Junction Temperature Range
SYMBOL
VCEO
VC80
VE80
Ic
ICM
18
Po
Po
TJ, TSTG
thermal characteristics
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purpose: W' from Case for 5 Seconds
I ROJA
TL
631
D74FY4D
80
100
5
4
6
0.4
1.8
3.0
-55 to +150
41.7
260
UNITS
Volts
Volts
Volts
A
A
Watts
Watts
°C
°CIW
°C




GE

D74FY4D Datasheet Preview

D74FY4D Datasheet

NPN POWER TRANSISTOR

No Preview Available !

electrical characteristics (TA = 25° C) (unless otherwise specified)
I I ICHARACTERISTIC
SYMBOL MIN
TYP
off characteristics
Collector-Emitter Breakdown Voltage
(Ie = 10mA. IB = 0)
Collector-Base Breakdown Voltage
(Ic = 1mA, IE'= 0)
Colle,ctor Cutoff Current
(VeB = 100V, IE = 0)
Collector Cutoff Current
(VCE = 80V, IB = 0)
Emitter Cutoff Current
(VEB = 5V, Ic = 0)
on characteristics
DC Current Gain
(IC = 1A, VCE = 2V)
(Ic == 3A, VCE = 2V)
Collector-Emitter Saturation Voltage
(Ic = 3A, IB = 6mA)
Base-Emitter Saturation Voltage
(Ic = 3A, IB = 6mA)
switching characteristics
Turn-on Time
Storage Time
Fall Time
VCC = 30V
IB1 = -IB2 = 6mA
Duty Cycle = 1%
VBR(CEO)
VBR{CBO)
ICBO
ICED
lEBO
80
100
~
-
-
-
-
------
-
-
hFE
VCE(sat)
VBE(sat)
2000
1000
-
-
ton -
tstg -
t1 -
-
-
-
-
0.2
1.5
0.6
MAX
-
-
?O
20
2.5
-
-
1.5
2.0
-
-
-
UNIT
Volts
Volts
Jl.A
Jl.A
mA
-
Volts
Volts
Jl.S
OUTPUT
161 , - - - - - - . . ,
-I
I
..--1
162 1
L _ _ _ _ _11J\j1V\l.....JV\tv-...
c:
o
+--+-+++--+--+-++<CURVES SHOULD BE APPLIED IN THERMAL LIMITED AREA
(SINIG~E{ION~EPEITI1 PULSE, NO HEAT SINK)
O -~o~ 100 I. ONE CIRCUIT ACTION
_ 2, TWO CIRCUIT ACTION
3. THREE CIRCUIT ACTION +-+-t+r-t-HiZ=.!!!::i~F""'f+tt---t---t-tii
!III po'
m
FIG. 1 SWITCHING TIME TEST CIRCUIT
~- 1 0 0 f - - - f - - - f -
aw:
~ CONDITION: NO HEAT SINK
:cf:f.;.i
>w-
~ 50~--~~~~~--~--+---+---+---+---+--4
§
z
~ NUMBERS OF ACTIONED CIRCUIT l:PC
f--+'~--!----!----!---~~ ~II~~~I~
~::~
THREE CIRCUIT.
3.0W
COLLECTOR POWER DISSIPATION Pc (W)
FIG. 3 COLLECTOR POWER DISSIPATION vs.
JUNCTION TEMPERATURE
0.001
0,01
0.1
10 100 1000
PULSE WIDTH tw (sec)
FIG. 2 TRANSIENT THERMAL RESISTANCE VI.
PULSE WIDTH
~
tr
oZ 5
~
~4
i5
ffi
~3
oa:
t; 2
~
8
o
o
CONDITION: NO HEAT SIN,I
rJ.tIl~~
~~-- ---1ito
Clf!
CUlr
ON~ CIII
Ir-'l '11/
cr,Oiy
~CU'T
r-....
~
f'...
25 50 75 100 125 150
AMBIENT TEMPERATURE Ta =(OC)
175
FIG. 4 TOTAL COLLECTOR POWER DISSIPATION
632


Part Number D74FY4D
Description NPN POWER TRANSISTOR
Maker GE
Total Page 2 Pages
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