* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
D80AN2
GE
192.75 KB
Field effect power transistor.
~~o~~~u FIELD EFFECT POWER TRANSISTOR D80AM2,N2 0.32 AMPERES 150,200 VOLTS RDS(ON) = 5.0 n This series of N-Channel Enhancement-mode Power MOSFETs u.
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