* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
D84DR2
GE
203.49 KB
Field effect power transistor.
~D~~~LF FIELD EFFECT POWER TRANSISTOR IRF830,831 D84DR2,R1 4.5 AMPERES 500, 450 VOLTS ~DS(ON) =1.5.0. This series of N-Channel Enhancement-mode Powe.
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