* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
D84EN2
GE
198.95 KB
Field effect power transistor.
~o~[p~ FIELD EFFECT POWER TRANSISTOR IRF640,641 D84EN2,M2 18 AMPERES 200, 150 VOLTS ROS(ON) =0.18 n This series of N-Channel Enhancement-mode Power .
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