* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
D86DN2
GE
199.38 KB
Field effect power transistor.
~D~[?~ FIELD EFFECT POWER TRANSISTOR IRF230,231 D86DN2,M2 9.0 AMPERES 200,150 VOLTS ROS(ON} = 0.4 n This series of N-Channel Enhancement-mode Power .
📁 Related Datasheet
D86DK2 FIELD EFFECT POWER TRANSISTOR (GE)
D86DL2 FIELD EFFECT POWER TRANSISTOR (GE)
D86DM2 FIELD EFFECT POWER TRANSISTOR (GE)
D86DQ1 FIELD EFFECT POWER TRANSISTOR (GE)
D86DQ2 FIELD EFFECT POWER TRANSISTOR (GE)
D86DR1 FIELD EFFECT POWER TRANSISTOR (GE)
D86DR2 FIELD EFFECT POWER TRANSISTOR (GE)
D862 2SD862 (Wing Shing Computer Components)
D863 2SD863 (Sanyo Semiconductor Corporation)
D864 2SD864 (Inchange Semiconductor)
