* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
D86EQ1
GE
201.15 KB
Field effect power transistor.
~ffi1D~ [P~lF FIELD EFFECT POWER TRANSISTOR IRF340,341 D86EQ2,Q1 10 AMPERES 400, 350 VOLTS ROS(ON) =0.55 n This series of N-Channel Enhancement-mode.
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