* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
D86ER1
GE
192.01 KB
Field effect power transistor.
~D~I?~ FIELD EFFECT POWER TRANSISTOR IRF440,441 D86ER2,R1 SAMPERES 500, 450 VOLTS ROS(ON) = 0.S5 il This series of N-Channel Enhancement-mode Power .
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