* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* . Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
D88FN2
GE
194.93 KB
Field effect power transistor.
~o~~LF FIELD EFFECT POWER TRANSISTOR IRF~250,251 D88FN2!M2 30 AMPERES 200, 150 VOLTS ROS(ON) =0.085 n This series of N-Channel Enhancement-mode Powe.
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