IGT6E10, IGT6D10 Datasheet - GE

IGT6E10 Insulated Gate Bipolar Transistor

mTMlJ~~~ Insulated Gate Bipolar Transistor Preliminary 26.4 4/85 IGT6D10,E10 10 AMPERES 400, 500 VOLTS EQUIV. RDS(ON) = 0.27 n This IGT'II Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS gate turn onloff power switching device combining the best advantages of power MOSFETS and bipolar transistors. The result is a device that has the high input impedance of MOSFETS and the low on-state conduction losses similar to bipolar transistors. The device design and gate character.

IGT6E10 Features

* Low VCE(SAT) - 2.5V typ @ 10A

* Ultra-fast turn-on - 150 ns typical

* Polysilicon MOS gate - Voltage controlled turn onloff

* High current handling -10 amps @ 100°C N-CHANNEL c .~ CASE STYLE TO-204AA (TO-3) DIMENSIONS ARE IN INCHES AND (MILLIMETERS) ~~~

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IGT6D10-GE.pdf