IGT6E10
Features
:
- Low VCE(SAT)
- 2.5V typ @ 10A
- Ultra-fast turn-on
- 150 ns typical
- Polysilicon MOS gate
- Voltage controlled turn onloff
- High current handling -10 amps @ 100°C
N-CHANNEL c
.~
CASE STYLE TO-204AA (TO-3)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
~~~---t ~'''"''~" I:0.845121.47) M A X ' H .358(9.09) MAX
O.043{1.09) OIA.-I10.038(0.97)
.426110.82) MIN
CASE TEMP. REFERENCE
POINT .20(5.00)
0.162(4.09) OIA.
0.15(3.84) 2 HOLES
0.440(11.18) 0.420(10.67) maximum ratings (TC = 25° C) (unless otherwise specified)
RATING Collector-Emitter Voltage, VGE = OV
Collector-Gate Voltage. RGE = 1Mn
Continuous Drain Current@Tc = 100°C @Tc= 25°C
Pulsed Collector Current(1)
Gate-Emitter Voltage
Total Power Dissipation @TC=25°C Derate Above 25° C
Operating and Storage Junction Temperature Range
SYMBOL VCES VCGR Ic
ICM VGE Po
TJ. TSTG
IGT6D10 400 400 10 18 40 ±25 75 0.6
-55 to 150 thermal characteristics
Thermal Resistance. Junction to Case
R8JC
Maximum Lead Temperature for...
