IGT6E10 - Insulated Gate Bipolar Transistor

Download the IGT6E10 datasheet PDF. This datasheet also covers the IGT6D10 variant, as both devices belong to the same insulated gate bipolar transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

Low VCE(SAT) - 2.5V typ @ 10A.
Ultra-fast turn-on - 150 ns typical.
Polysilicon MOS gate - Voltage controlled turn onloff.
High current handling -10 amps @ 100°C N-.

📥 Download Datasheet

IGT6E10 insulated gate bipolar transistor by GE - Datasheet Preview — Note: The manufacturer provides a single datasheet file (IGT6D10-GE.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	IGT6E10
Manufacturer	GE
File Size	291.90 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IGT6E10 Datasheet

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Other Datasheets by GE

Part Number	Description
IGT6E11	Insulated Gate Bipolar Transistor
IGT6E20	Insulated Gate Bipolar Transistor
IGT6E21	Insulated Gate Bipolar Transistor
IGT6D10	Insulated Gate Bipolar Transistor
IGT6D11	Insulated Gate Bipolar Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

mTMlJ~~~ Insulated Gate Bipolar Transistor Preliminary 26.4 4/85 IGT6D10,E10 10 AMPERES 400, 500 VOLTS EQUIV. RDS(ON) = 0.27 n This IGT'II Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS·gate turn onloff power switching device combining the best advantages of power MOSFETS and bipolar transistors. The result is a device that has the high input impedance of MOSFETS and the low on-state conduction losses similar to bipolar transistors. The device design and gate characteristics of the IGT'II Transistor are also similar to power MOSFETS. An important difference is the equivalent RDS(ON) drain resistance which is modulated to a low value (10 times lower) when the gate is turned on.