IGT6E10 Key Features
- Low VCE(SAT)
- 2.5V typ @ 10A
- Ultra-fast turn-on
- 150 ns typical
- Polysilicon MOS gate
- Voltage controlled turn onloff
- High current handling -10 amps @ 100°C
- 55 to 150
- 55 to 150
- IGT6E10
- Part: IGT6E10
- Manufacturer: GE
- Size: 291.90 KB
Related GE Datasheets
| Part Number | Description |
|---|---|
| IGT6E11 | Insulated Gate Bipolar Transistor |
| IGT6E20 | Insulated Gate Bipolar Transistor |
| IGT6E21 | Insulated Gate Bipolar Transistor |
| IGT6D10 | Insulated Gate Bipolar Transistor |
| IGT6D11 | Insulated Gate Bipolar Transistor |
IGT6E10 Description
RDS(ON) = 0.27 n This IGT'II Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS·gate turn onloff power switching device bining the best advantages of power MOSFETS and bipolar transistors. The result is a device that has the high input impedance of MOSFETS and the low on-state conduction losses similar to bipolar transistors. The device design and gate characteristics of the IGT'II Transistor are...