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IRF632 Datasheet FIELD EFFECT POWER TRANSISTOR

Manufacturer: GE

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Datasheet Details

Part number IRF632
Manufacturer GE
File Size 195.29 KB
Description FIELD EFFECT POWER TRANSISTOR
Datasheet download datasheet IRF632 Datasheet

Overview

~D~[F~lr FIELD EFFECT POWER TRANSISTOR IRF632,633 8.0 AMPERES 200, 150 VOLTS ROS(ON) ::: 0.6 0.

This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.

This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers.

Key Features

  • Polysilicon gate - Improved stability and reliability.
  • No secondary breakdown - Excellent ruggedness.
  • Ultra-fast switching - Independent of temperature.
  • Voltage controlled - High transconductance.
  • Low input capacitance - Reduced drive requirement.
  • Excellent thermal stability - Ease of paralleling N-.

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