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IRF642 Datasheet FIELD EFFECT POWER TRANSISTOR

Manufacturer: GE

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Datasheet Details

Part number IRF642
Manufacturer GE
File Size 202.11 KB
Description FIELD EFFECT POWER TRANSISTOR
Datasheet download datasheet IRF642 Datasheet

Overview

~[R1D~LP~ FIELD EFFECT POWER TRANSISTOR IRF642,643 16 AMPERES 200,150 VOLTS ROS(ON) = 0.22 D.

This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.

This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers.

Key Features

  • Polysilicon gate - Improved stability and reliability.
  • No secondary breakdown - Excellent ruggedness.
  • Ultra-fast switching - Independent of temperature.
  • Voltage controlled - High transconductance.
  • Low input capacitance - Reduced drive requirement.
  • Excellent thermal stability - Ease of paralleling N-.

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