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IRF642 - FIELD EFFECT POWER TRANSISTOR

GE

The IRF642 by GE is a FIELD EFFECT POWER TRANSISTOR. Below is the official datasheet preview.

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IRF642 FIELD EFFECT POWER TRANSISTOR by GE - Datasheet Preview — Official preview page of the IRF642 FIELD EFFECT POWER TRANSISTOR datasheet (GE).

Datasheet Details

Part number	IRF642
Manufacturer	GE
File Size	202.11 KB
Description	FIELD EFFECT POWER TRANSISTOR
Datasheet	IRF642-GE.pdf
Additional preview pages of the IRF642 datasheet.

IRF642 Product details

Features

Polysilicon gate - Improved stability and reliability.
No secondary breakdown - Excellent ruggedness.
Ultra-fast switching - Independent of temperature.
Voltage controlled - High transconductance.
Low input capacitance - Reduced drive requirement.
Excellent thermal stability - Ease of paralleling N-.

📁 IRF642 Similar Datasheet

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IRF640FI - N-Channel Mosfet Transistor (Inchange Semiconductor)
IRF640FP - N-Channel MOSFET (STMicroelectronics)
IRF640L - Power MOSFET (International Rectifier)
IRF640N - Power MOSFET (International Rectifier)
IRF640NL - Power MOSFET (International Rectifier)

Other Datasheets by GE

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Published: Feb 9, 2019 |