IRFF313, IRFF312 Datasheet - GE

IRFF313 FIELD EFFECT POWER TRANSISTOR

~D~[P~U FIELD EFFECT POWER TRANSISTOR IRFF312,313 1.15 AMPERES 400, 350 VOLTS ROS(ON) =5.0 !l Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating .

IRFF313 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement

IRFF312-GE.pdf

IRFF313 Datasheet Preview — This datasheet PDF includes multiple part numbers: IRFF313, IRFF312. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IRFF313, IRFF312

Manufacturer:

File Size:

186.76 KB

Description:

Field effect power transistor.

Note:

This datasheet PDF includes multiple part numbers: IRFF313, IRFF312.
Please refer to the document for exact specifications by model.

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TAGS

IRFF313 IRFF312 FIELD EFFECT POWER TRANSISTOR GE

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