Click to expand full text
~D~~ IRFF322,323
FIELD EFFECT PONER TRANSISTOR
2.0 AMPERES 400, 350 VOLTS
. ROS(ON) = 2.5 n
Preliminary
This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors.
IRFF322 Datasheet
