P10C68
P10C68 is CMOS / SNOS NVSRAM manufactured by GEC Plessey Semiconductors.
feature the industry standard pinout for non-volatile RAMs in a 28-pin 0.3-inch plastic and ceramic dual-in-line packages.
NE A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 Vss
1 2 3 4 5 6 7 8 9 10 11 12 13 14
28 27 26 25 24 23 22 21 20 19 18 17 16 15
VCC W NC A8 A9 A 11 G A 10 E DQ 7 DQ 6 DQ 5 DQ 4 DQ 3
FEATURES
I Non-Volatile Data Integrity I 10 year Data Retention in EEPROM I 35ns and 45ns Address and Chip Enable Access Times I 20ns and 25ns Output Enable Access I Unlimited Read and Write to SRAM I Unlimited Recall Cycles from EEPROM I 104 Store Cycles to EEPROM I Automatic Recall on Power up I Automatic Store Timing I Hardware Store Protection I Single 5V ± 10% Operation I Available in Standard Package 28-pin 0.3-inch DIL plastic and ceramic I mercial and Industrial temperature ranges ORDERING INFORMATION (See back page) Pin Name A0
- A12 W DQ0
- DQ7 E G VCC VSS Pin 1 NE Pin 1 N/C Function Address inputs Write enable Data in/out Chip enable Output enable Power (+5V) Ground Non volatile enable P10C68 No connection P11C68
Figure 1. Pin connections
- top view.
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P10C68/P11C68
EEPROM ARRAY 256 x 256 A3 A4 A5 A6 A7 A8 A9 A12 R O W D E C O D E R STATIC RAM ARRAY 256 x 256
STORE
RECALL
STORE/ RECALL CONTROL
DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 I N P U T B U F F E R S
COLUMN I/O
COLUMN DECODER
A0
A1
A2
A10 A11
G NE (P10C68 only) E W
Figure 2. Logic block diagram.
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P10C68/P11C68
NOTE Stresses greater than those listed in the Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; functional operation of the device at any other conditions than those indicated in the operational sections of the specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect reliability.
ABSOLUTE MAXIMUM RATINGS Voltage on typical input relative to VSS Voltage on DQ0-7 and G(bar) Temperature under Bias Storage temperature Power dissipation DC output current -0.6V to 7.0V -0.5V to...