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P11C68 Datasheet

Manufacturer: GEC Plessey Semiconductors
P11C68 datasheet preview

Datasheet Details

Part number P11C68
Datasheet P11C68_GECPlesseySemiconductors.pdf
File Size 176.47 KB
Manufacturer GEC Plessey Semiconductors
Description CMOS / SNOS NVSRAM
P11C68 page 2 P11C68 page 3

P11C68 Overview

The SRAM can be read and written an unlimited number of times while independent non-volatile data resides in PROM. On the P10C68 data may easily be transferred from the SRAM to the EEPROM (STORE) and from the EEPROM back to the SRAM ( RECALL) using the NE (bar) pin. The Store and Recall cycles are initiated through software sequences on the P11C68.

P11C68 Key Features

  • A12 W DQ0
  • DQ7 E G VCC VSS Pin 1 NE Pin 1 N/C Function Address inputs Write enable Data in/out Chip enable Output enable Power (+5V
  • top view
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