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GEC Plessey Semiconductors

P11C68 Datasheet Preview

P11C68 Datasheet

CMOS / SNOS NVSRAM

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P10C68/P11C68
PRELIMINARY INFORMATION
DS3600-1.2 September 1992
P10C68/P11C68
(Previously PNC10C68 and PNC11C68)
CMOS/SNOS NVSRAM
HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM
(Supersedes DS3159-1.3, DS3160-1.3, DS3234-1.1, DS3235-1.1)
The P10C68 and P11C68 are fast static RAMs (35 and 45
ns) with a non-volatile electically-erasable PROM (EEPROM)
cell incorporating in each static memory cell. The SRAM can
be read and written an unlimited number of times while
independent non-volatile data resides in PROM.
On the P10C68 data may easily be transferred from the
SRAM to the EEPROM (STORE) and from the EEPROM back
to the SRAM ( RECALL) using the NE (bar) pin. The Store and
Recall cycles are initiated through software sequences on the
P11C68. These devices combine the high performance and
ease of use of a fast SRAM with the data integrity of non-
volatility.
The P10C68 and P11C68 feature the industry standard
pinout for non-volatile RAMs in a 28-pin 0.3-inch plastic and
ceramic dual-in-line packages.
FEATURES
I Non-Volatile Data Integrity
I 10 year Data Retention in EEPROM
I 35ns and 45ns Address and Chip Enable Access Times
I 20ns and 25ns Output Enable Access
I Unlimited Read and Write to SRAM
I Unlimited Recall Cycles from EEPROM
I 104 Store Cycles to EEPROM
I Automatic Recall on Power up
I Automatic Store Timing
I Hardware Store Protection
I Single 5V ± 10% Operation
I Available in Standard Package 28-pin 0.3-inch DIL
plastic and ceramic
I Commercial and Industrial temperature ranges
ORDERING INFORMATION
(See back page)
NE
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
Vss
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28 VCC
27 W
26 NC
25 A8
24 A9
23 A11
22 G
21 A10
20 E
19 DQ7
18 DQ6
17 DQ5
16 DQ4
15 DQ3
Pin 1
Pin 1
Pin Name
A0 - A12
W
DQ0 - DQ7
E
G
VCC
VSS
NE
N/C
Function
Address inputs
Write enable
Data in/out
Chip enable
Output enable
Power (+5V)
Ground
Non volatile enable
No connection
P10C68
P11C68
Figure 1. Pin connections - top view.
1




GEC Plessey Semiconductors

P11C68 Datasheet Preview

P11C68 Datasheet

CMOS / SNOS NVSRAM

No Preview Available !

P10C68/P11C68
www.DataSheet4U.com
A3
A4
A5
A6
A7
A8
A9
A12
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
EEPROM ARRAY
256 x 256
R
O
W
STORE
D STATIC RAM
E ARRAY
C
O
256 x 256
RECALL
D
E
R
COLUMN I/O
I COLUMN DECODER
N
P
U
T
B
U
F
A0 A1 A2 A10 A11
F
E
R
S
Figure 2. Logic block diagram.
2
STORE/
RECALL
CONTROL
G
NE (P10C68 only)
E
W


Part Number P11C68
Description CMOS / SNOS NVSRAM
Maker GEC Plessey Semiconductors
Total Page 17 Pages
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