3205TR Description
The OGFD 3205TR is the N-Channel logic enhancement mode Power field effect transistors are produced using high cell density trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching and low...
3205TR Key Features
- RoHS pliant
- Low ON Resistance
- Low Gate Charge
- Peak Current vs Pulse Width Curve
- Inductive Switching Curves