Datasheet Details
| Part number | 3205TR |
|---|---|
| Manufacturer | GFD |
| File Size | 435.55 KB |
| Description | N-Channel MOSFETS |
| Datasheet |
 3205TR Datasheet
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| Part number | 3205TR |
|---|---|
| Manufacturer | GFD |
| File Size | 435.55 KB |
| Description | N-Channel MOSFETS |
| Datasheet |
3205TR Datasheet
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The OGFD 3205TR is the N-Channel logic enhancement mode Power field effect transistors are produced using high cell density trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.
N-Channel MOSFETS.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| ETC | 3205 | Power MOSFET | ETC |
| Part Number | Description |
|---|---|
| 3205PL | N-Channel MOSFETS |