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5N60F - 600V N-Channel MOSFET

This page provides the datasheet information for the 5N60F, a member of the 5N60 600V N-Channel MOSFET family.

Description

This Power MOSFET is produced using Truesemi’s advanced planar stripe, DMOS technology.This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics, such as fast switching time,low on resistance.low gate charge and especially excel

Features

  • 4.5A, 600V, RDS(on) = 2.5Ω @VGS = 10 V.
  • Low gate charge ( typical 17nC).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability Ordering Information PART NUMBER.

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Datasheet preview – 5N60F

Datasheet Details

Part number 5N60F
Manufacturer GFD
File Size 1.37 MB
Description 600V N-Channel MOSFET
Datasheet download datasheet 5N60F Datasheet
Additional preview pages of the 5N60F datasheet.
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Full PDF Text Transcription

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600V N-Channel MOSFET GENERAL DESCRIPTION This Power MOSFET is produced using Truesemi’s advanced planar stripe, DMOS technology.This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics, such as fast switching time,low on resistance.low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at AC adaptors, on the battery charger and SMPS 5N60/5N60F VDSS RDS(ON) ID 600V 2.5Ω 4.5A Features • 4.5A, 600V, RDS(on) = 2.5Ω @VGS = 10 V • Low gate charge ( typical 17nC) • Fast switching • 100% avalanche tested • Improved dv/dt capability Ordering Information PART NUMBER PACKAGE BRAND 5N60/5N60F TO-220/220F 0GFD www.goford.
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