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740 - 400V N-Channel MOSFET

Datasheet Summary

Description

This Power MOSFET is produced using advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 10.5A, 400V, RDS(on) = 0.55Ω @VGS = 10 V.
  • Low gate charge ( typical 30nC).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability Ordering Information PART NUMBER.

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Datasheet Details

Part number 740
Manufacturer GFD
File Size 415.95 KB
Description 400V N-Channel MOSFET
Datasheet download datasheet 740 Datasheet
Additional preview pages of the 740 datasheet.

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    Full PDF Text Transcription

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    400V N-Channel MOSFET GENERAL DESCRIPTION This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. 740 VDSS RDS(ON) ID 400V 0.55Ω 10.5A Features • 10.5A, 400V, RDS(on) = 0.55Ω @VGS = 10 V • Low gate charge ( typical 30nC) • Fast switching • 100% avalanche tested • Improved dv/dt capability Ordering Information PART NUMBER PACKAGE BRAND 740 TO-220 0GFD www.goford.
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