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GME
GME

2SA1832 Datasheet Preview

2SA1832 Datasheet

Plastic-Encapsulate Transistors

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2SA1832 pdf
Plastic-Encapsulate Transistors
FEATURES
High voltage and high current.
Excellent hFE linearity.
High hFE.
Complementary to 2sc4738.
Small package.
Pb
Lead-free
Production specification
2SA1832
ORDERING INFORMATION
Type No.
Marking
2SA1832
SO/SY/SG
SOT-523
Package Code
SOT-523
MAXIMUM RATING @ Ta=25unless otherwise specified
Symbol
Parameter
Limits
VCBO
collector-base voltage
-50
VCEO
collector-emitter voltage
-50
VEBO
IC
emitter-base voltage
collector current
-5
-150
IB Base current
-30
PC Collector power dissipation
Tstg storage temperature range
100
-55 to +125
Tj junction temperature
125
Unit
V
V
V
mA
mA
mW
°C
°C
H026
Rev.A
www.gmesemi.com
1



GME
GME

2SA1832 Datasheet Preview

2SA1832 Datasheet

Plastic-Encapsulate Transistors

No Preview Available !

2SA1832 pdf
Production specification
Plastic-Encapsulate Transistors
2SA1832
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. Typ. MAX. UNIT
V(BR)CBO
V(BR)CEO
V(BR)BEO
ICBO
IEBO
hFE(1)
VCE(sat)
Cobo
fT
Collector-base breakown voltage
Collector- emitter breakown voltage
Emitter-base breakown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=-100μA,IE=0
IC=-1μA,IB=0
IE=-100μA,IC=0
IE=0,VCB=-50V
IC=0,VEB=-5V
VCE=-6V,IC=-2mA
collector-emitter saturation voltage IC=-100mA,IB=-10mA
Output capacitance
transition frequency
IE=0,VCB=-10V,f=1MHz
IC=-1mA,VCE =-10V,
-50
-50
-5
-0.1 μA
-0.1 μA
70 400
-0.1 -0.3 V
4
80
7 pF
MHz
CLASSIFICATION OF hFE(1)
Rang
70-140
Marking
SO
120-240
SY
200-400
SG
H026
Rev.A
www.gmesemi.com
2


Part Number 2SA1832
Description Plastic-Encapsulate Transistors
Maker GME
Total Page 4 Pages
PDF Download
2SA1832 pdf
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