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2SC4272 Datasheet Preview

2SC4272 Datasheet

NPN Epitaxial Planar Silicon Transistor

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NPN Epitaxial Planar Silicon Transistor
FEATURES
Small size making it easy to
provide high-density,small-sized
hybrid ICs.
Pb
Lead-free
Production specification
2SC4272
ORDERING INFORMATION
Type No.
Marking
2SC4272
CH
SOT-89
Package Code
SOT-89
MAXIMUM RATING @ Ta=25unless otherwise specified
Symbol
Parameter
Value
VCBO
VCEO
VEBO
IC
ICP
PC
Tj,Tstg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Current(Pulse)
Collector Dissipation
Junction and Storage Temperature
75
45
5
1.0
1.5
1.3
-55 to +150
Units
V
V
V
A
A
W
E054
Rev.A
www.gmesemi.com
1




GME

2SC4272 Datasheet Preview

2SC4272 Datasheet

NPN Epitaxial Planar Silicon Transistor

No Preview Available !

Production specification
NPN Epitaxial Planar Silicon Transistor
2SC4272
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX
Collector-base breakdown voltage V(BR)CBO
Collector-emitter breakdown voltage V(BR)CEO
IC=10uA,IE=0
IC=1mA,IB=0
75
45
Emitter-base breakdown voltage
V(BR)EBO IE=10uA,IC=0
5
Collector cut-off current
Emitter cut-off current
DC current gain
ICBO VCB=40V,IE=0
IEBO VEB=4V,IC=0
hFE VCE=5V,IC=500mA
60
1.0
1.0
390
Collector-emitter saturation voltage VCE(sat) IC=0.5A, IB=0.05A
0.2 0.6
Base-emitter saturation voltage
VBE(sat)
IC=0.5A, IB=0.05A
0.9 1.2
Transition frequency
fT
VCE=10V,Ic=50mA
180 250
Collector output capacitance
Cob VCB=10V,IE=0,f=1MHz
15
UNIT
V
V
V
μA
μA
V
V
MHz
pF
CLASSIFICATION OF hFE
Rank
Range
60-120
D
100-200
E
160-390
F
TYPICAL CHARACTERISTICS @ Ta=25unless otherwise specified
E054
Rev.A
www.gmesemi.com
2


Part Number 2SC4272
Description NPN Epitaxial Planar Silicon Transistor
Maker GME
Total Page 3 Pages
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