3CA1837 Datasheet | Galaxy Microelectronics

Plastic-Encapsulate Transistors Features - plementary to 3DA4793 - Collector Power Dissipation - PCM : 2W (Tamb=25.) 20 W (Tcase=25.) Pb Lead-free Production specification ITO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO VCEO VEBO IC PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation Junction and Storage Temperature -230 -230 -5 -1 1.5 -55 to +150 V V V A W ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN Typ MAX Collector-base Breakdown Voltage Collector-emitter Breakdown Voltage Emitter-base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-emitter Saturation Voltage BVCBO BVCEO BVEBO ICBO IEBO h FE VCE(sat) IC=-100µA,IB=0 IC=-1m A,IB=0 IE=-100µA,IC=0 VCB=-230V,IE=0 VEB=-5V,IC=0...