5N65
FEATURES
- RDS(ON) =2.4Ω@ VGS = 10V
- Ultra low gate charge ( typical 15 n C )
Pb
Lead-free
- Low reverse transfer Capacitance ( CRSS = typical 6.5 p F )
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability, high ruggedness
Production specification
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
VDSS
Drain-Source voltage
VGSS
IDM EAS EAR dv/dt
Gate -Source voltage
Continuous Drain Current
Pulsed Drain Current
Avalanche Energy
Single Pulsed Repetitive
Peak Diode Recovery dv/dt
PD Power Dissipation RθJA Thermal resistance,Junction-to-Ambient
TJ Junction Temperature
TOPR, Tstg Operating and Storage Temperature
TO-220AB
Value 650
±30 5.0 20 210 10 4.5 75 62.5
+150
-55 to +150
Units V V A A m J V/ns W ℃/W ℃ ℃
X115 Rev.A
.gmesemi.
Production specification
5A,650V N-Channel Power Mosfet
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless...
