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GME

A94 Datasheet Preview

A94 Datasheet

High Voltage Transistor

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Production specification
High Voltage Transistor
FEATURES
Collector-Emitter voltage:VCEO=-400V.
Collecter Dissipation:PC(MAX)=350mW.
Pb
Lead-free
Low collecter-Emitter saturation voltage.
A94
APPLICATIONS
High voltage switch.
Telephone switching.
ORDERING INFORMATION
Type No.
Marking
A94 A94
SOT-89
Package Code
SOT-89
MAXIMUM RATING @ Ta=25unless otherwise specified
Symbol Parameter
Value
VCBO
collector-base voltage
-400
VCEO
collector-emitter voltage
-400
VEBO
emitter-base voltage
-6
IC collector current (DC)
-0.3
PC
Tj ,Tstg
Collector dissipation
junction and storage temperature
0.35
-40 to +150
UNIT
V
V
V
A
W
°C
E082
Rev.A
www.gmesemi.com
1




GME

A94 Datasheet Preview

A94 Datasheet

High Voltage Transistor

No Preview Available !

Production specification
High Voltage Transistor
A94
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Symbol Parameter
Test conditions
MIN. MAX.
V(BR)CBO
V(BR)CEO
Collector-base breakdown voltage IC=-100μA,IE=0
Collector-emitter breakdown voltage IC=-1.0mA,IB=0
-400
-400
-
-
V(BR)CES
V(BR)EBO
ICBO
ICES
IEBO
hFE
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
collector cut-off current
collector cut-off current
emitter cut-off current
DC current gain
IC=-100μA,VBE=0
IE=-100μA,IC=0
IE = 0,VCB = -300V
VBE=0,VCE =-400V
IC = 0,VEB =- 4V
VCE =-10V; IC=-1mA
VCE =-10V;IC =-10mA
VCE =-10V;IC =-50mA
VCE =-10V;IC =-100mA
-400
-5
-
-
-
60
70
70
40
-
-
-0.1
-1
-0.1
-
300
-
-
VCE(sat)
VBE(sat)
Cob
Collector-emitter saturation voltage
Base-emitter saturation voltage
Output Capacitance
IC =-10mA; IB =-1mA
IC =-50mA; IB =-5mA
IC =10mA; IB=1mA
VCB=-20V,IE=0,f=1MHz
-0.20
-
-0.5
- -0.75
-7
UNIT
V
V
V
V
μA
μA
μA
V
V
pF
TYPICAL CHARACTERISTICS @ Ta=25unless otherwise specified
E082
Rev.A
www.gmesemi.com
2


Part Number A94
Description High Voltage Transistor
Maker GME
PDF Download

A94 Datasheet PDF






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